by National Aeronautics and Space Administration, George C. Marshall Space Flight Center, For sale by the National Technical Information Service in [Marshall Space Flight Center, Ala.], [Springfield, Va .
Written in English
|Statement||by B. G. Penn, A. W. Shields, and D. O. Frazier.|
|Series||NASA technical memorandum -- NASA TM-100341., NASA technical memorandum -- 100341.|
|Contributions||Shields, A. W., Frazier, Donald O., George C. Marshall Space Flight Center.|
|The Physical Object|
The growth of single crystals of organic compounds by the Czochralski method is reviewed. From the literature it is found that single crystals of benzil, a nonlinear optical material with a d sub 11 value of + or - x d sub 11 value of alpha quartz, has fewer dislocations than generally contained in Bridgman : B. G. Penn, A. W. Shields, D. O. Frazier. A preliminary review of organic materials single crystal growth by the Czochralski technique Author: B G Penn ; A W Shields ; Donald O Frazier ; George C. Marshall Space Flight Center. Journal of Crystal Growth 43 () North-Holland Publishing Company THE GROWTH OF SINGLE CRYSTALS OF SOME ORGANIC COMPOUNDS BY THE CZOCHRALSKI TECHNIQUE AND THE ASSESSMENT OF THEIR PERFECTION J. BLEAY, R.M. HOOPER, R.S. NARANG and J.N. SHERWOOD Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow Gi JXL, Cited by: The crystal growth mechanisms of high critical temperature (T c) superconducting (HTSC) materials with experimental results of single crystals and polycrystalline bulk crystals with highly oriented grains are reviewed, especially focusing on YBa 2 Cu 3 O 7-δ and REBa 2 Cu 3 O 7-δ, the most widely studied HTSC material. By first considering the basic and fundamental solidification processes of the HTSC .
Single crystal that semiconductor industry thrive on, are grown using Czochralski (CZ) crystal growth technique. Over the years many researchers have investigated the problems related to CZ crystal growth system and number of studies related to different aspects of CZ crystal growth File Size: KB. The growth aspect differs from crystal depending as their physics and chemical properties such as solubility, melting point [10 ], decomposition, phase change, etc, This chapter gives a brief account of the methods of crystal Size: KB. above mel ng point → recrystalliza on (macroscopic single‐crystal growth at the optimum conditions) and refining of the material Method is mostly applied for the single‐crystal growth of semiconductor materials (Si, Ge). Ge. A novel modified Czochralski crystal growth technique for low temperature was designed with a closed chamber which allowed for variations in the environment. A large sized single crystal of 8-hydroxyquinoline with diameter cm and length cm was successfully grown in an argon atmosphere. Structural par.
single crystal technique became similar to today’s process. Research and development activities on single crystal processes have been continued due to necessity of improving semiconductor technology. In this study, manufacturing of single crystal, Czochralski method, its parameters, and historical developments have been discussed in detail. 1. Single crystals of germanium along and were grown using the Czochralski technique. These were the preliminary experiments to check the feasibility to grow high pure germanium for detector application. Effect of pull rates and orientation on the dislocation density was studied as it is the crucial parameter for the detector grade by: 1. Transparent semiconducting β‐Ga 2 O 3 single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga 2 O dynamic calculations on different atmospheres containing CO 2, Ar and O 2 reveal that CO 2 growth atmosphere combined with overpressure significantly decreases Cited by: Pure and crystal violet dye doped ( M%) benzophenone single crystals have been grown by Czochralski technique. Morphology of the grown crystal was analyzed by .